ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES

被引：413

作者：

WALUKIEWICZ, W ^{[1
]}

RUDA, HE ^{[1
]}

LAGOWSKI, J ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4571 / 4582

页数：12

共 50 条

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APPLIED PHYSICS LETTERS, 2003, 83 (02) :302-304

[32] Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures [J].

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[33] Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures [J].

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[34] High electron mobility in AlGaAs/GaAs modulation-doped structures [J].

Saku, Tadashi ;

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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (05) :902-905

[35] Band Structure Dependence of Electron Mobility in Modulation-Doped Lattice-Matched InAlAs/InGaAs/InAlAs Heterostructures [J].

Ahn, Il-Ho ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)

[36] ELECTRON VELOCITY AT HIGH ELECTRON FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES. [J].

Masselink, W.T. ;

Braslau, N. ;

LaTulipe, D. ;

Wang, W.I. ;

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Solid-State Electronics, 1987, 31 (3-4) :337-340

[37] SYSTEMATICS OF ELECTRON-MOBILITY IN SI SIGE HETEROSTRUCTURES [J].

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[38] HIGH ELECTRON-MOBILITY IN MODULATION-DOPED GAXIN1-XAS/ALYIN1-YAS HETEROSTRUCTURES WITH HIGHLY STRAINED ALLNAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ZHANG, YH ;

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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :590-595

[39] DEPENDENCE OF ELECTRON-MOBILITY ON DOPED IMPURITIES [J].

CHEN, YF ;

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SU, P ;

TUNG, CJ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4827-4833

[40] ELECTRON-MOBILITY IN HEAVILY DOPED SILICON [J].

SY, HK ;

ONG, CK .

SOLID STATE COMMUNICATIONS, 1984, 52 (10) :881-883

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