ELECTRON-MOBILITY IN MODULATION-DOPED HETEROSTRUCTURES

被引：413
作者：
WALUKIEWICZ, W [1 ]
RUDA, HE [1 ]
LAGOWSKI, J [1 ]
GATOS, HC [1 ]
机构：
[1] MIT,CAMBRIDGE,MA 02139
来源：
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.30.4571
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4571 / 4582
页数：12
相关论文
共 50 条
  • [21] ELECTRON-MOBILITY AND LANDAU-LEVEL WIDTH IN MODULATION-DOPED GAAS-ALXGA1-XAS HETEROJUNCTIONS
    VOISIN, P
    GULDNER, Y
    VIEREN, JP
    VOOS, M
    MAAN, JC
    DELESCLUSE, P
    LINH, NT
    [J]. PHYSICA B & C, 1983, 117 (MAR): : 634 - 636
  • [22] High-mobility inverted modulation-doped GaAs/AlGaAs heterostructures
    [J]. Saku, Tadashi, 1600, (33):
  • [23] Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on GaAs substrates
    Semenova, ES
    Zhukov, AE
    Vasil'ev, AP
    Mikhrin, SS
    Kovsh, AR
    Ustinov, VM
    Musikhin, YG
    Blokhin, SA
    Gladyshev, AG
    Ledentsov, NN
    [J]. SEMICONDUCTORS, 2003, 37 (09) : 1104 - 1106
  • [24] Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates
    E. S. Semenova
    A. E. Zhukov
    A. P. Vasil’ev
    S. S. Mikhrin
    A. R. Kovsh
    V. M. Ustinov
    Yu. G. Musikhin
    S. A. Blokhin
    A. G. Gladyshev
    N. N. Ledentsov
    [J]. Semiconductors, 2003, 37 : 1104 - 1106
  • [25] WEAK LOCALIZATION AND ELECTRON ELECTRON INTERACTION IN MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    TABORYSKI, R
    LINDELOF, PE
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) : 933 - 946
  • [26] ELECTRON-MOBILITY IN 2-DIMENSIONAL MODULATION-DOPED IN1-XALXAS/IN1-YGAYAS ALLOY SYSTEMS
    HASBUN, JE
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 11989 - 11997
  • [27] ELECTRON-MOBILITY MODULATION IN INAS/(ALXGA1-X)SB HETEROSTRUCTURES
    YOH, K
    MORIUCHI, T
    INOUE, M
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 56 - 57
  • [28] Electron mobility in modulation-doped AlSb/InAs quantum wells
    Li, Yanbo
    Zhang, Yang
    Zeng, Yiping
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [29] Linear and Nonlinear Electron Transport in Modulation-Doped AlGaN/GaN Heterostructures
    [J]. Cao, J.C., 1600, Japan Society of Applied Physics (43):
  • [30] Single-electron transistor based on modulation-doped SiGe heterostructures
    Notargiacomo, A
    Di Gaspare, L
    Scappucci, G
    Mariottini, G
    Evangelisti, F
    Giovine, E
    Leoni, R
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (02) : 302 - 304
12345