CHARACTERIZATION OF SURFACE-STATES IN MOS CAPACITORS BY A MODIFIED DLTS TECHNIQUE

被引：18
作者：
KUMAR, V
IYER, SB
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 76卷 / 02期
关键词：
D O I：
10.1002/pssa.2210760228
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：637 / 640
页数：4
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共 15 条
[1]   SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J].
CARD, HC .
SOLID-STATE ELECTRONICS, 1979, 22 (09) :809-817
[2]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[3]  
Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[4]   A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J].
JANSSON, L ;
KUMAR, V ;
LEDEBO, LA ;
NIDEBORN, K .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04) :464-467
[5]   ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J].
JOHNSON, NM .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :802-804
[6]   PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON [J].
KALYANARAMAN, V ;
KUMAR, V .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01) :317-323
[7]   INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].
KAR, S ;
DAHLKE, WE .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+
[8]   TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].
KATSUBE, T ;
KAKIMOTO, K ;
IKOMA, T .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3504-3508
[9]   CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES [J].
KUMAR, V ;
DAHLKE, WE .
SOLID-STATE ELECTRONICS, 1977, 20 (02) :143-152
[10]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
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