THEORY OF NOISE IN METAL OXIDE SEMICONDUCTOR DEVICES

被引:77
作者
JORDAN, AG
JORDAN, NA
机构
关键词
D O I
10.1109/T-ED.1965.15471
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:148 / +
页数:1
相关论文
共 24 条
[1]   ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].
HALL, RN .
PHYSICAL REVIEW, 1952, 87 (02) :387-387
[2]   EXCESS NOISE IN FIELD-EFFECT TRANSISTORS [J].
HALLADAY, HE ;
BRUNCKE, WC .
PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1671-&
[3]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
[4]  
HOFSTEIN SR, TO BE PUBLISHED
[5]   DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J].
IHANTOLA, HKJ ;
MOLL, JL .
SOLID-STATE ELECTRONICS, 1964, 7 (06) :423-430
[6]  
LAURITZEN P, 1963, IEEE T ELECTRON DEV, V10, P334
[7]   IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].
LEHOVEC, K ;
SLOBODSKOY, A .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79
[8]   FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON [J].
LEHOVEC, K ;
SLOBODSKOY, A ;
SPRAGUE, JL .
PHYSICA STATUS SOLIDI, 1963, 3 (03) :447-464
[9]  
MCWHORTER AL, 1955, THESIS MASSACHUSETTS
[10]  
MOLL JL, 1959 IRE WESC 3, P32