SPATIAL-DISTRIBUTION OF FREE-CARRIER LIFETIME AND DEEP-LEVEL LUMINESCENCE ACROSS A SEMIINSULATING GAAS WAFER

被引：33

作者：

LEO, K ^{[1
]}

RUHLE, WW ^{[1
]}

HAEGEL, NM ^{[1
]}

机构：

[1] SIEMENS AG,RES & DEV LABS,D-8520 ERLANGEN,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3055 / 3058

页数：4

共 16 条

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[10] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

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