JUNCTION BETWEEN AMORPHOUS-GERMANIUM AND MONOCRYSTAL SI-N(P)

被引：5
|
作者：
SINHA, NP
MISRA, M
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 12期
关键词：
D O I：
10.1016/0038-1101(83)90146-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1177 / 1180
页数：4
相关论文
共 50 条
  • [41] CHARACTERISTICS OF GERMANIUM P-N JUNCTION WITH IRREGULAR STRUCTURE
    TOMONO, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (07) : 1223 - 1236
  • [42] DIRECT VIEWING OF IMPERFECTIONS IN GERMANIUM P-N JUNCTION
    TOMONO, M
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (12) : 2254 - 2264
  • [43] The affinity of Si-N and Si-C bonding in amorphous silicon carbon nitride (a-SiCN) thin film
    Chen, CW
    Huang, CC
    Lin, YY
    Chen, LC
    Chen, KH
    DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 1126 - 1130
  • [44] As preamorphization of the predeposited amorphous Si layer for the formation of the silicided ultra shallow p+-n junction
    Kwon, Sang Jik
    Kim, Yeo Hwan
    Chun, Kuk Jin
    Lee, Jong Duk
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 664 - 667
  • [45] AS PREAMORPHIZATION OF THE PREDEPOSITED AMORPHOUS SI LAYER FOR THE FORMATION OF THE SILICIDED ULTRA-SHALLOW P(+)-N JUNCTION
    KWON, SJ
    KIM, YH
    CHUN, KJ
    LEE, JD
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 664 - 667
  • [46] A DEVELOPMENTAL GERMANIUM N-P-N ALLOY-JUNCTION TRANSISTOR
    JENNY, DA
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (03): : 412 - 412
  • [47] Chemical bonding investigation of amorphous hydrogenated Si-N alloys deposited by plasma immersion ion processing
    Jacobsohn, LG
    Schulze, RK
    Daemen, LL
    Afanasyev-Charkin, IV
    Nastasi, M
    THIN SOLID FILMS, 2006, 494 (1-2) : 219 - 222
  • [48] Dopant Profile Model in a Shallow Germanium n+/p Junction
    Baek, Jung Woo
    Shim, Jaewoo
    Park, Jin-Hong
    Jung, Woo-Shik
    Yu, Hyun-Yong
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (10) : L1855 - L1858
  • [49] Dopant profile model in a shallow germanium n+/p junction
    Jung Woo Baek
    Jaewoo Shim
    Jin-Hong Park
    Woo-Shik Jung
    Hyun-Yong Yu
    Journal of the Korean Physical Society, 2013, 63 : 1855 - 1858
  • [50] Analysis of junction leakage in advanced germanium p plus /n junctions
    Eneman, G.
    Casain, O. Sicart i
    Simoen, E.
    Brunco, D. P.
    De Jaeger, B.
    Satta, A.
    Nicholas, G.
    Claeys, C.
    Meuris, M.
    Heyns, M. M.
    ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, : 454 - +
12345