GAAS HETEROEPITAXIAL GROWTH ON SI FOR SOLAR-CELLS

被引：56

作者：

ITOH, Y

NISHIOKA, T

YAMAMOTO, A

YAMAGUCHI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1617 / 1618

页数：2

共 9 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[4] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[5] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J].

ITOH, Y ;

NISHIOKA, T ;

YAMAMOTO, A ;

YAMAGUCHI, M .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1614-1616

[6] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[7]

Nakanishi T., 1985, J CRYST GROWTH, V55, P4578

[8] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[9] EFFECT OF DISLOCATIONS ON THE EFFICIENCY OF THIN-FILM GAAS SOLAR-CELLS ON SI SUBSTRATES [J].

YAMAGUCHI, M ;

YAMAMOTO, A ;

ITOH, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1751-1753

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