DEPTH DISTRIBUTIONS AND RANGE PARAMETERS FOR HE IMPLANTED IN SI AND GAAS

被引：29
作者：
WILSON, RG [1 ]
DELINE, VR [1 ]
HOPKINS, CG [1 ]
机构：
[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期
关键词：
D O I：
10.1063/1.93339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：929 / 931
页数：3
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