ANALYSIS OF RBS SPECTRA FROM SAMPLES IMPLANTED TO HIGH-DOSE

被引:2
|
作者
JENSEN, K
FARLOW, GC
机构
[1] Wright State University, Dayton
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
关键词
D O I
10.1016/0168-583X(91)95294-N
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A procedure for extracting the local stoichiometry and atomic fraction of constituents from RBS spectra of a sample implanted to high dose is described. The procedure is applied to SiO2 and when combined with an assumption about oxygen concentration is used to deduce the volume concentration of Si vs depth in the sample.
引用
收藏
页码:643 / 646
页数:4
相关论文
共 50 条
  • [41] IMPLANT REDISTRIBUTION IN HIGH-DOSE ION-IMPLANTED AND ANNEALED SILICON
    CHRISTODOULIDES, CE
    CARTER, G
    WILLIAMS, JS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 87 - 90
  • [42] Transient enhanced diffusion and deactivation of high-dose implanted arsenic in silicon
    Uematsu, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1006 - 1012
  • [43] DIFFUSION, SEGREGATION, AND RECRYSTALLIZATION IN HIGH-DOSE ION-IMPLANTED SI
    PENNYCOOK, SJ
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 45 - 52
  • [44] RAPID THERMAL ANNEALING OF HIGH-DOSE ARSENIC-IMPLANTED SILICON
    KOGLER, R
    WIESER, E
    OTTO, G
    KNOTHE, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (01): : 53 - 59
  • [45] Chemistry and structure of beta silicon carbide implanted with high-dose aluminum
    Du, Honghua
    Yang, Zunde
    Libera, Matthew
    Jacobson, Dale C.
    Wang, Yu C.
    Davis, Robert E.
    Journal of the American Ceramic Society, 1993, 76 (02): : 330 - 335
  • [46] THERMAL ANNEALING AND ELECTRICAL ACTIVATION OF HIGH-DOSE GALLIUM IMPLANTED SILICON
    ARORA, BM
    CASTILLO, JM
    KURUP, MB
    SHARMA, RP
    JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) : 845 - 862
  • [47] Microstructure of Al-alloy surface implanted with high-dose nitrogen
    Hara, Y
    Yamanishi, T
    Azuma, K
    Uchida, H
    Yatsuzuka, M
    SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3): : 166 - 169
  • [48] Transient enhanced diffusion and deactivation of high-dose implanted arsenic in silicon
    Uematsu, Masashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1006 - 1012
  • [49] OXIDE RATE CHARACTERIZATION OF HIGH-DOSE KRYPTON-IMPLANTED SILICON
    KISIELEWICZ, M
    THIN SOLID FILMS, 1984, 120 (04) : 329 - 336
  • [50] GERMANIUM IMPLANTED WITH HIGH-DOSE OXYGEN AND ITS OPTICAL-PROPERTIES
    ZHANG, QC
    KELLY, JC
    KENNY, MJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (03): : 257 - 262