ION MIXING

被引：105

作者：

MATTESON, S ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1983年 / 13卷

关键词：

D O I：

10.1146/annurev.ms.13.080183.002011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：339 / 362

页数：24

共 81 条

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[2]

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[3] ION-BEAM MIXING AT NICKEL-SILICON INTERFACES [J].

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MOYLE, J ;

SCHALIT, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1342-1349

[4]

BAGLIN J, 1980, THIN FILM INTERFACES

[5]

Baron M., 1982, Metastable Materials Formation by Ion Implantation. Proceedings of the Materials Research Society Annual Meeting, P43

[6]

BESENBACHER F, 1982, 1982 P ION BEAM MOD

[7]

BHIDE VG, 1982, 1982 P ION BEAM MOD

[8]

BIASSE B, 1982, 1982 P ION BEAM MOD

[9]

CAMPISANO SU, 1982, 1982 P ION BEAM MOD

[10] SILICIDE FORMATION BY HIGH-DOSE SI+-ION IMPLANTATION OF PD [J].

CHAPMAN, GE ;

LAU, SS ;

MATTESON, S ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6321-6327

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