CALCULATION OF POINT-DEFECT CONCENTRATIONS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

Thermodynamic chemistry of native defects is applied to molecular beam epitaxial (MBE) growth of GaAs. Following the model of Stringfellow [J. Cryst. Growth 70, 133 (1984)], we assume that the equilibrium is established at the solid-vapor interface. Calculated results show that the defect concentration is rather low, less than 10(15) cm-3 under usual growth conditions and that MBE GaAs is less As-rich than those grown by organometallic vapor phase epitaxy or halogen transport vapor phase epitaxy.