CALCULATION OF POINT-DEFECT CONCENTRATIONS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：1

作者：

ICHIMURA, M

WADA, T

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 03期

关键词：

D O I：

10.1063/1.351806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermodynamic chemistry of native defects is applied to molecular beam epitaxial (MBE) growth of GaAs. Following the model of Stringfellow [J. Cryst. Growth 70, 133 (1984)], we assume that the equilibrium is established at the solid-vapor interface. Calculated results show that the defect concentration is rather low, less than 10(15) cm-3 under usual growth conditions and that MBE GaAs is less As-rich than those grown by organometallic vapor phase epitaxy or halogen transport vapor phase epitaxy.

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页码：1200 / 1202

页数：3

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