A CBLM APPROACH TO THE ELECTRONIC-STRUCTURE OF TRANSITION-METAL IMPURITIES IN SILICON

被引：1

作者：

WILKE, S

MASEK, J

VELICKY, B

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1986年 / 133卷 / 02期

关键词：

D O I：

10.1002/pssb.2221330249

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K111 / K114

页数：4

共 6 条

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[3] CALCULATION OF THE SPIN-POLARIZED ELECTRONIC-STRUCTURE OF AN INTERSTITIAL IRON IMPURITY IN SILICON
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) : 365 - 378
[5] TRANSITION-METALS IN SILICON
WEBER, ER
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01): : 1 - 22
[6] THEORY OF SUBSTITUTIONAL AND INTERSTITIAL 3D IMPURITIES IN SILICON
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