SURFACE ELECTRONIC BANDS OF GAAS(110) DETERMINED BY ANGLE-RESOLVED INVERSE PHOTOEMISSION

被引:38
作者
REIHL, B
RIESTERER, T
TSCHUDY, M
PERFETTI, P
机构
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 18期
关键词
D O I
10.1103/PhysRevB.38.13456
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:13456 / 13459
页数:4
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共 27 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].
CALANDRA, C ;
MANGHI, F ;
BERTONI, CM .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1911-1927
[3]   SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :631-636
[5]   EXPERIMENTAL ENERGY-BAND DISPERSIONS, CRITICAL-POINTS, AND SPIN-ORBIT SPLITTINGS FOR GASB USING ANGLE-RESOLVED PHOTOEMISSION [J].
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 22 (06) :2940-2944
[6]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[7]   INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) [J].
DOSE, V ;
GOSSMANN, HJ ;
STRAUB, D .
SURFACE SCIENCE, 1982, 117 (1-3) :387-393
[8]   INVESTIGATION OF INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) BY ISOCHROMAT SPECTROSCOPY [J].
DOSE, V ;
GOSSMANN, HJ ;
STRAUB, D .
PHYSICAL REVIEW LETTERS, 1981, 47 (08) :608-610
[9]   OBSERVATION OF A RELATIONSHIP BETWEEN CORE-LEVEL LINE-SHAPES IN PHOTOELECTRON-SPECTROSCOPY AND THE LOCALIZATION OF SCREENING ORBITALS [J].
FUGGLE, JC ;
CAMPAGNA, M ;
ZOLNIEREK, Z ;
LASSER, R ;
PLATAU, A .
PHYSICAL REVIEW LETTERS, 1980, 45 (19) :1597-1600
[10]   DIRECT OBSERVATION OF ADSORBATE-INDUCED BAND-GAP STATES ON GAAS(110) [J].
HAIGHT, R ;
BOKOR, J .
PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2846-2849