OXIDATION OF ARSENIC IMPLANTED POLYCRYSTALLINE SILICON

被引：4

作者：

KINSBRON, E

MURARKA, SP

SHENG, TT

LYNCH, WT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 07期

关键词：

D O I：

10.1149/1.2120033

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1555 / 1560

页数：6

共 16 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[2]

Barin I., 1973, THERMOCHEMICAL PROPE

[3]

CHANG C, COMMUNICATION

[4]

Chu WK., 1978, BACKSCATTERING SPECT

[5] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696

[6] ARSENIC GLASS SOURCE DIFFUSION IN SI AND SIO2 [J].

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :110-116

[7] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON [J].

IRENE, EA ;

TIERNEY, E ;

DONG, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :705-713

[8] OXIDATION OF PHOSPHORUS-DOPED LOW-PRESSURE AND ATMOSPHERIC-PRESSURE CVD POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) :838-844

[9]

MARCUS RB, 1981, MAY EL SOC M MINN

[10] THERMAL-OXIDATION OF ARSENIC-DIFFUSED SILICON [J].

OHKAWA, S ;

NAKAJIMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) :1997-2002

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