TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF SI AND GE

被引：237

作者：

ALLEN, PB ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.27.4760

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4760 / 4769

页数：10

共 26 条

[1]

ALLEN PB, 1981, PHYS REV B, V24, P7479, DOI 10.1103/PhysRevB.24.7479

[2] THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES [J].

ALLEN, PB ;

HEINE, V .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12) :2305-2312

[3] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].

ALLEN, PB ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505

[4] SOLIDS WITH THERMAL OR STATIC DISORDER .1. ONE-ELECTRON PROPERTIES [J].

ALLEN, PB .

PHYSICAL REVIEW B, 1978, 18 (10) :5217-5224

[5]

Antoncik E., 1955, CZECH J PHYS, V5, P449

[6] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B, 1973, 8 (04) :1777-1780

[7] CALCULATION OF THE GAMMA-DELTA ELECTRON-PHONON AND HOLE-PHONON MATRIX-ELEMENTS IN SILICON [J].

BEDNAREK, S ;

ROSSLER, U .

PHYSICAL REVIEW LETTERS, 1982, 48 (18) :1296-1296

[8] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J].

CAMASSEL, J ;

AUVERGNE, D .

PHYSICAL REVIEW B, 1975, 12 (08) :3258-3267

[9]

Cardona M, 1972, ATOMIC STRUCTURE PRO, P514

[10]

Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

← 1 2 3 →