GROWTH OF GAAS MICROCRYSTAL BY GA DROPLET FORMATION AND SUCCESSIVE AS SUPPLY WITH LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：13
|
作者：
UEDA, T
GAO, QZ
YAMAICHI, E
YAMAGISHI, C
AKIYAMA, M
机构：
[1] OKI Electric Industry, Co., Ltd., Hachioji, Tokyo, 193
来源：
JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)91131-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaAs microcrystals were grown by the combination of Ga droplet formation and successive As supply with low-pressure metalorganic chemical vapor deposition. The Ga droplets were formed by Ga(CH3)(3) supply, and they were transformed to GaAs microcrystals by successive AsH3 supply. The size and the density of the GaAs microcrystals were controlled by the deposition conditions of the Ga droplets. Several photoluminescence peaks with high intensities were observed from the GaAs microcrystals sandwiched with AlGaAs layers.
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收藏
页码：707 / 713
页数：7
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