AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER

被引：26
作者：
RAO, MA
CAINE, EJ
LONG, SI
KROEMER, H
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 01期
关键词：
D O I：
10.1109/EDL.1987.26540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：30 / 32
页数：3
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