JUNCTION TERMINATION EXTENSION FOR NEAR-IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTIONS

被引：82
作者：
TEMPLE, VAK
TANTRAPORN, W
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期
关键词：
D O I：
10.1109/T-ED.1986.22713
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1601 / 1608
页数：8
相关论文
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[5]   INCREASED AVALANCHE BREAKDOWN VOLTAGE AND CONTROLLED SURFACE ELECTRIC-FIELDS USING A JUNCTION TERMINATION EXTENSION (JTE) TECHNIQUE [J].
TEMPLE, VAK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :954-957
[6]   SUBSTRATE ETCH GEOMETRY FOR NEAR IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTION DEVICES [J].
TEMPLE, VAK ;
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[7]   PRACTICAL ASPECTS OF THE DEPLETION ETCH METHOD IN HIGH-VOLTAGE DEVICES [J].
TEMPLE, VAK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :977-982
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