SUBPICOSECOND CARRIER LIFETIMES IN RADIATION-DAMAGED GAAS

被引：94

作者：

LAMBSDORFF, M ^{[1
]}

KUHL, J ^{[1
]}

ROSENZWEIG, J ^{[1
]}

AXMANN, A ^{[1
]}

SCHNEIDER, J ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 17期

关键词：

D O I：

10.1063/1.105061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the dependence of carrier lifetimes in radiation-damaged GaAs on proton implantation dose by means of time-resolved reflectivity and photoconductivity experiments with subpicosecond resolution. The carrier lifetimes decrease with increasing implantation dose at low implantation levels whereas beyond the "amorphization dose" a saturation at 0.5 ps can be observed due to a saturation of the defect density.

引用

页码：1881 / 1883

页数：3

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