MOLECULAR-BEAM EPITAXY OF PARA-TYPE MODULATION DOPED GAAS AND APPLICATION TO PARA-CHANNEL FIELD-EFFECT TRANSISTORS

被引：2
|
作者：
GOSSARD, AC
WIEGMANN, W
STORMER, HL
BALDWIN, K
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词：
D O I：
10.1116/1.583185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：584 / 584
页数：1
相关论文
共 50 条
  • [1] HEAVILY CARBON DOPED PARA-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    YAMADA, T
    TOKUMITSU, E
    SAITO, K
    AKATSUKA, T
    MIYAUCHI, M
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 145 - 149
  • [2] PARA-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS BASED ON ALSB0.9AS0.1/GASB
    LUO, LF
    LONGENBACH, KF
    WANG, WI
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) : 567 - 569
  • [3] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    GILES, NC
    SCHETZINA, JF
    APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1735 - 1737
  • [4] GROWTH OF PARA-TYPE AND NORMAL-TYPE ZNSE BY MOLECULAR-BEAM EPITAXY
    CHENG, H
    DEPUYDT, JM
    POTTS, JE
    HAASE, MA
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 512 - 516
  • [5] PSEUDOMORPHIC ZNSE/N-GAAS DOPED-CHANNEL FIELD-EFFECT TRANSISTORS BY INTERRUPTED MOLECULAR-BEAM EPITAXY
    STUDTMANN, GD
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    MELLOCH, MR
    COOPER, JA
    PIERRET, RF
    MUNICH, DP
    CHOI, C
    OTSUKA, N
    APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1249 - 1251
  • [6] HIGH-QUALITY PARA-TYPE HGCDTE GROWN BY MOLECULAR-BEAM EPITAXY
    WIJEWARNASURIYA, PS
    BOUKERCHE, M
    FAURIE, JP
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 859 - 862
  • [7] ELECTRON AND NEUTRON DAMAGE IN NORMAL-CHANNEL AND PARA-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
    MILLER, DJ
    RYAN, RD
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (02): : 99 - 104
  • [8] LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY
    OMORI, M
    DRUMMOND, TJ
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1981, 39 (07) : 566 - 569
  • [9] MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-PERFORMANCE GAAS POWER FIELD-EFFECT TRANSISTORS
    ABROKWAH, JK
    GEDDES, J
    LONGERBONE, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1323 - 1326
  • [10] INFLUENCE OF BUFFER THICKNESS ON THE PERFORMANCE OF GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY
    SU, SL
    THORNE, RE
    FISCHER, R
    LYONS, WG
    MORKOC, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 961 - 964
12345