HIGH-RESOLUTION EELS ON THE (100) SURFACE OF BETA-SIC

被引:28
作者
DAYAN, M
机构
关键词
D O I
10.1016/S0039-6028(85)80007-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:L33 / L38
页数:6
相关论文
共 10 条
[1]  
DAYAN M, UNPUB
[2]   A HIGH-RESOLUTION EELS STUDY OF FREE-CARRIER VARIATIONS IN H2+/H+ BOMBARDED (100)GAAS [J].
DUBOIS, LH ;
SCHWARTZ, GP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :101-106
[3]   SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP [J].
DUBOIS, LH ;
SCHWARTZ, GP .
PHYSICAL REVIEW B, 1982, 26 (02) :794-802
[4]  
FUCHS R, 1965, PHYS REV, V140, P2076
[6]  
KLIEWER KL, 1966, PHYS REV, V144, P495, DOI 10.1103/PhysRev.144.495
[7]  
MARSHALL RC, 1973, SILICON CARBIDE 1973
[8]  
MIRLIN DN, 1982, SURFACE POLARITONS, P3
[9]   PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].
NISHINO, S ;
POWELL, JA ;
WILL, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462
[10]  
RYAN CE, 1969, SILICON CARBIDE 1968, pS1