CHEMICAL-DEPOSITION OF CU2O THIN-FILMS

被引:131
作者
RISTOV, M [1 ]
SINADINOVSKI, G [1 ]
GROZDANOV, I [1 ]
机构
[1] UNIV KIRIL METODIJ, FAC CHEM, Skopje, YUGOSLAVIA
关键词
CHEMICAL REACTIONS - OPTICAL PROPERTIES - SEMICONDUCTING FILMS;
D O I
10.1016/0040-6090(85)90041-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple method for the chemical deposition of Cu//2O thin films is described. The films obtained by this method are of high chemical purity and their thicknesses can easily be controlled during the deposition process. The physical properties of the films were examined and compared with the properties of Cu//2O obtained by other methods.
引用
收藏
页码:63 / 67
页数:5
相关论文
共 11 条
[1]   EFFECT OF THE OXYGEN-PRESSURE DURING SPUTTERING ON THE PROPERTIES OF THIN CUOX FILMS [J].
BEENSHMARCHWICKA, G ;
KROLSTEPNIEWSKA, L ;
SLABY, M .
THIN SOLID FILMS, 1982, 88 (01) :33-39
[2]   PHOTO-VOLTAIC EFFECTS IN CU2O-CU SOLAR-CELLS GROWN BY ANODIC-OXIDATION [J].
FORTIN, E ;
MASSON, D .
SOLID-STATE ELECTRONICS, 1982, 25 (04) :281-283
[3]  
KUZEL R, 1970, J APPL PHYS, V41, P271, DOI 10.1063/1.1658333
[4]  
MOTT NF, 1971, ELECTRONIC PROCESSES
[5]  
PANKOV JD, 1978, IZV VUZ FIZ, V3, P126
[6]   ELECTROLESS DEPOSITION OF SEMICONDUCTOR-FILMS [J].
SHARMA, NC ;
KAINTHLA, RC ;
PANDYA, DK ;
CHOPRA, KL .
THIN SOLID FILMS, 1979, 60 (01) :55-59
[7]   ELECTRICAL CONDUCTIVITY OF SINGLE-CRYSTAL CUPROUS OXIDE AT HIGH TEMPERATURES [J].
TOTH, RS ;
KILKSON, R ;
TRIVICH, D .
PHYSICAL REVIEW, 1961, 122 (02) :482-&
[8]  
UGAI JA, 1975, VVEDENIE HIMIJU POLU
[9]  
VOROBJEV JV, 1965, FIZ TVERD TELA LENIN, V7
[10]   PHOTOCONDUCTIVITY OF CUPROUS OXIDE IN RELATION TO ITS OTHER SEMICONDUCTING PROPERTIES [J].
WEICHMAN, FL .
PHYSICAL REVIEW, 1960, 117 (04) :998-1002