EVOLUTION OF THE SOLID-STATE IMAGE SENSOR

[1] VIDEO SIGNALS AND SWITCHING TRANSIENTS IN CAPACITOR-PHOTODIODE AND CAPACITOR-PHOTOTRANSISTOR IMAGE SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (11) : 1003 - &

[2] PERFORMANCE LIMITATIONS OF IGFET BUCKET-BRIGADE SHIFT REGISTER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 852 - +

[3] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[4] A HIGH-SPEED TAPPED CCD PHOTO-DIODE LINEAR IMAGE SENSOR [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 257 - 259

[5] VIRTUAL PHASE TECHNOLOGY - A NEW APPROACH TO FABRICATION OF LARGE-AREA CCDS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 483 - 489

[6] ELECTRON-HOLE RECOMBINATION ANTIBLOOMING FOR VIRTUAL-PHASE CCD IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 941 - 948

[7] KADEKOKI N, 1984, ISSCC, P36

[8] MOS AREA SENSOR .1. DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484X384 ELEMENT COLOR MOS IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1676 - 1681

[9] MICHON GJ, 1975, P S CHARGE COUPLED D, P106

[10] MICHON GJ, 1973, INT SOLID STATE CIRC, P138

[1] VIDEO SIGNALS AND SWITCHING TRANSIENTS IN CAPACITOR-PHOTODIODE AND CAPACITOR-PHOTOTRANSISTOR IMAGE SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (11) : 1003 - &

[2] PERFORMANCE LIMITATIONS OF IGFET BUCKET-BRIGADE SHIFT REGISTER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 852 - +

[3] CHARGE COUPLED SEMICONDUCTOR DEVICES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +

[4] A HIGH-SPEED TAPPED CCD PHOTO-DIODE LINEAR IMAGE SENSOR [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 257 - 259

[5] VIRTUAL PHASE TECHNOLOGY - A NEW APPROACH TO FABRICATION OF LARGE-AREA CCDS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 483 - 489

[6] ELECTRON-HOLE RECOMBINATION ANTIBLOOMING FOR VIRTUAL-PHASE CCD IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 941 - 948

[7] KADEKOKI N, 1984, ISSCC, P36

[8] MOS AREA SENSOR .1. DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484X384 ELEMENT COLOR MOS IMAGER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1676 - 1681

[9] MICHON GJ, 1975, P S CHARGE COUPLED D, P106

[10] MICHON GJ, 1973, INT SOLID STATE CIRC, P138