共 50 条
[43]
ELECTROLUMINESCENCE IN N-TYPE GAAS CRYSTALS AND ACOUSTOELECTRICAL CURRENT INSTABILITY
[J].
SOVIET PHYSICS SOLID STATE,USSR,
1969, 10 (09)
:2209-&
[44]
INFRARED-ABSORPTION IN N-TYPE AND P-TYPE SILICON-CARBIDE SINGLE-CRYSTALS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1973, 7 (03)
:406-408
[46]
PHOTOCONDUCTIVITY OF n-TYPE CuInSe2 SINGLE CRYSTALS.
[J].
Soviet physics. Semiconductors,
1980, 14 (05)
:526-528
[49]
Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs
[J].
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96),
1996,
:295-298
[50]
MODIFICATION OF THE E3 CENTERS IN IRRADIATED N-TYPE GAAS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1990, 24 (02)
:180-183