PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES

被引：71

作者：

DOO, VY

KERR, DR

NICHOLS, DR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 01期

关键词：

D O I：

10.1149/1.2411006

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：61 / &

共 10 条

[1]

BEAN KE, 1966, OCT PHIL M SOC

[2] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&

[3]

FORGENG WP, 1958, T MET SOC AIME, V47, P343

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[5] EVIDENCE OF HOLE INJECTION AND TRAPPING IN SILICON NITRIDE FILMS PREPARED BY REACTIVE SPUTTERING [J].

HU, SM ;

KERR, DR ;

GREGOR, LV .

APPLIED PHYSICS LETTERS, 1967, 10 (03) :97-&

[6] PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

HU, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) :693-+

[7] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].

KERR, DR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :385-&

[8]

LEE CH, 1966, OCT PHIL M SOC

[9]

SCOTT JH, 1966, OCT PHIL M SOC

[10]

TOLANSKY S, 1948, MULTIPLEBEAN INTERFE

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