HIGH-PRESSURE STUDY OF SOLID-PHASE EPITAXIAL REGROWTH IN IMPLANTED AMORPHOUS GAAS

被引：3

作者：

LICOPPE, C

SAVARY, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：740 / 742

页数：3

共 50 条

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[48] A study of substrate orientation dependence of the solid-phase epitaxial growth of amorphised GaAs [J].

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[49] Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium [J].

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[50] Optimization of solid-phase epitaxial regrowth performed by UV nanosecond laser annealing [J].

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