HIGH-PRESSURE STUDY OF SOLID-PHASE EPITAXIAL REGROWTH IN IMPLANTED AMORPHOUS GAAS

被引：3
作者：
LICOPPE, C
SAVARY, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期
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D O I：
10.1063/1.98852
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：740 / 742
页数：3
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