PHOTOCONDUCTIVITY PROPERTIES OF VANADIUM DOPED BULK GAAS

被引：3

作者：

JIMENEZ, J ^{[1
]}

BONNAFE, J ^{[1
]}

GONZALEZ, MA ^{[1
]}

HERNANDEZ, P ^{[1
]}

MERINO, JC ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 02期

关键词：

D O I：

10.1002/pssa.2210960262

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K207 / K212

页数：6

共 12 条

[1] UNIAXIAL-STRESS SPECTROSCOPY OF LUMINESCENCE AT 0.74 EV FROM VANADIUM-DOPED GALLIUM-ARSENIDE [J].

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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (36) :6883-6891

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[3] IDENTIFICATION OF A VANADIUM-RELATED LEVEL IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS [J].

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DABKOWSKI, FP ;

LAGOWSKI, J ;

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[5] THERMAL REGENERATION OF THE EL2 CENTER UNQUENCHED CONFIGURATION IN SEMI-INSULATING GAAS [J].

FILLARD, JP ;

BONNAFE, J ;

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03) :149-153

[6] OPTICALLY ENHANCED DEFECT REACTIONS IN SEMI-INSULATING BULK GAAS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

HERNANDEZ, P ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1152-1160

[7] A STUDY ON THE PHOTOCONDUCTIVITY OF A SET OF HORIZONTAL BRIDGMAN SEMI-INSULATING GAAS INGOTS [J].

JIMENEZ, J ;

GONZALEZ, MA ;

DESAJA, JA ;

BONNAFE, J .

JOURNAL OF MATERIALS SCIENCE, 1984, 19 (04) :1207-1219

[8] THERMAL QUENCHING OF THE 1-1.35EV EXTRINSIC PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS (CR,O) [J].

JIMENEZ, J ;

GONZALEZ, MA ;

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SOLID STATE COMMUNICATIONS, 1984, 49 (09) :917-920

[9] ON THE PHOTOCONDUCTIVITY RESPONSE OF GAAS DOPED WITH CHROMIUM AND OXYGEN [J].

JIMENEZ, J ;

GONZALEZ, MA ;

SANZ, LF ;

BONNAFE, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02) :K189-K192

[10] SPECTROSCOPIC STUDY OF VANADIUM IN GAP AND GAAS [J].

KAUFMANN, U ;

ENNEN, H ;

SCHNEIDER, J ;

WORNER, R ;

WEBER, J ;

KOHL, F .

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