SILICON P-N JUNCTION RADIATION DETECTORS FOR TELSTAR SATELLITE

被引：17

作者：

BUCK, TM

RODGERS, JW

WHEATLEY, GH

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1964年 / NS11卷 / 03期

关键词：

D O I：

10.1109/TNS.1964.4323438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：294 / +

页数：1

共 15 条

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[5]

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[8] COMPENSATED-SURFACE OXIDE-PASSIVATED SILICON JUNCTION RADIATION DETECTORS [J].

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[9] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

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[10] SILICON DIOXIDE PASSIVATION OF P-N JUNCTION PARTICLE DETECTORS [J].

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