MEASUREMENT OF SPOT NOISE OF GERMANIUM GALLIUM ANTIMONIDE GALLIUM ARSENIDE + SILICON ESAKI DIODES

被引：9

作者：

KING, BG

SHARPE, GE

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1964.15325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / +

页数：1

共 15 条

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[2]

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[3]

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[4]

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ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[6] GALLIUM ARSENIDE TUNNEL DIODES [J].

HOLONYAK, N ;

LESK, IA .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08) :1405-1409

[7] THEORY OF TUNNELING [J].

KANE, EO .

[8]

LEE CA, 1960, B AM PHYS SOC 2, V5, P160

[9]

LESK IA, 1959, 1959 IRE WESCON CO 3, P9

[10]

PUCEL RA, 1961, P IRE, V49, P1080