MODELING OF TRANSVERSE PROPAGATION DELAYS IN THE GAAS/ALGAAS MODULATION-DOPED HETEROJUNCTION FIELD-EFFECT TRANSISTORS

被引：1
作者：
GOEL, AK
XU, W
机构：
[1] Electrical Engineering, Michigan Technological University, Houghton
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 6-7期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/22.238551
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length, width and the gate metal resistivity have been studied.
引用
收藏
页码：1230 / 1232
页数：3
相关论文
共 4 条
[1]   MILLIMETER-WAVE PERFORMANCE OF ULTRASUBMICROMETER-GATE FIELD-EFFECT TRANSISTORS - A COMPARISON OF MODFET, MESFET, AND PBT STRUCTURES [J].
DAS, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1429-1440
[2]   A HIGH ASPECT RATIO DESIGN APPROACH TO MILLIMETER-WAVE HEMT STRUCTURES [J].
DAS, MB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) :11-17
[3]   MODELING OF THE TRANSVERSE DELAYS IN GAAS-MESFETS [J].
GOEL, AK ;
WESTGATE, CR .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (10) :1411-1417
[4]   NONLINEAR PARASITICS IN MODFETS AND MODFET-I-V CHARACTERISTICS [J].
ROBLIN, P ;
RICE, L ;
BIBYK, SB ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1207-1214
1