TEMPERATURE BEHAVIOR AND ANNEALING OF INSULATED GATE TRANSISTORS SUBJECTED TO LOCALIZED LIFETIME CONTROL BY PROTON IMPLANTATION

被引：7
作者：
MOGROCAMPERO, A [1 ]
LOVE, RP [1 ]
CHANG, MF [1 ]
DYER, RF [1 ]
机构：
[1] GE,DEPT POWER ELECTR SEMICOND,SYRACUSE,NY 13221
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 02期
关键词：
D O I：
10.1016/0038-1101(87)90147-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：185 / 188
页数：4
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