SURFACE-STRUCTURE OF GAAS(211)

被引：20

作者：

HREN, P ^{[1
]}

TU, DW ^{[1
]}

KAHN, A ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

SURFACE SCIENCE | 1984年 / 146卷 / 01期

关键词：

D O I：

10.1016/0039-6028(84)90229-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：69 / 79

页数：11

共 12 条

[1] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1984, 29 (02) :785-792

[2]

CHADI DJ, COMMUNICATION

[3] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[4] SEMICONDUCTOR SURFACE STRUCTURES [J].

Kahn, A. .

SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300

[5]

KAPLAN R, 1982, SURF SCI, V116, P104, DOI 10.1016/0039-6028(82)90681-1

[6]

MACRAE AU, 1966, SURF SCI, V4, P247

[7] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS [J].

MEYER, RJ ;

DUKE, CB ;

PATON, A ;

KAHN, A ;

SO, E ;

YEH, JL ;

MARK, P .

PHYSICAL REVIEW B, 1979, 19 (10) :5194-5205

[8] LEED STUDIES OF CLEAN HIGH MILLER INDEX SURFACES OF GERMANIUM [J].

OLSHANETSKY, BZ ;

MASHANOV, VI ;

NIKIFOROV, AI .

SURFACE SCIENCE, 1981, 111 (03) :429-440

[9] LEED STUDIES OF CLEAN HIGH MILLER INDEX SURFACES OF SILICON [J].

OLSHANETSKY, BZ ;

MASHANOV, VI .

SURFACE SCIENCE, 1981, 111 (03) :414-428

[10] ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

CHO, AY ;

REINHART, FK ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1982, 48 (03) :170-173

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