THERMAL-STABILITY OF THE CU/PD/SI METALLURGY

被引:23
作者
CHANG, CA
机构
关键词
D O I
10.1063/1.102305
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1543 / 1545
页数:3
相关论文
共 11 条
[1]   FORMATION OF PTSI IN THE PRESENCE OF AL [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1864-1868
[3]   THERMAL-STABILITY OF THE CU/PTSI METALLURGY [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) :2989-2992
[4]  
HOSSACK HH, 1973, J APPL PHYS, V44, P3476
[5]  
KOSTER U, 1982, J APPL PHYS, V53, P7436, DOI 10.1063/1.330113
[6]   COMPOUND FORMATION AND KINETICS IN AL-PD2SI REACTIONS [J].
LIU, JC ;
MAYER, JW .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) :336-342
[7]  
MURARKA SP, 1983, SILICIDES VLSI APPLI
[8]   DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J].
NICOLET, MA ;
BARTUR, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :786-793
[9]  
Nicolet MA, 1983, VLSI ELECTRONICS MIC, V6, P330
[10]   BARRIER LAYERS - PRINCIPLES AND APPLICATIONS IN MICROELECTRONICS [J].
WITTMER, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :273-280