STEADY-STATE BIPOLAR PHENOMENA IN ONE-LEVEL SEMICONDUCTORS

被引：2
作者：
ALMAZOV, AB
PINCEVICIUS, A
VISCAKAS, J
机构：
[1] MOSCOW MINING INST,DEPT HIGHER MATH,MOSCOW,USSR
[2] V KAPSUKAS STATE UNIV,VILNIUS,LISSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 35卷 / 02期
关键词：
D O I：
10.1002/pssa.2210350218
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：563 / 569
页数：7
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[3]  
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[4]  
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[5]  
OSIPOV VV, 1967, FIZ TEKH POLUPROV, V1, P1975
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :49-59
[8]   AMBIPOLAR MOBILITY AND INJECTION CURRENTS IN SEMICONDUCTORS WITH DEEP TRAPS [J].
SABLIKOV, VA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02) :735-745
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