OPTICAL AND PHOTOELECTRIC PROPERTIES OF ANODIC OXIDE-FILMS ON GAAS, GAP, AND GAAS0.6P0.4

被引：0

作者：

KASHKAROV, PK ^{[1
]}

OBRAZTSOV, AN ^{[1
]}

SOROKIN, IN ^{[1
]}

SOSNOVSKIKH, YN ^{[1
]}

机构：

[1] MOSCOW ELECTR ENGN INST,MOSCOW,USSR

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关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1407 / 1410

页数：4

共 10 条

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[2] OPTICAL-PROPERTIES OF ANODICALLY GROWN NATIVE OXIDES ON SOME GA-V COMPOUNDS FROM 1.5 TO 6.0 EV
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SCHWARTZ, B
STUDNA, AA
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[3] CATOS HC, 1983, JPN J APPL PHYS, V22, P11
[4] INTERFACE STATES AND INTERNAL PHOTOEMISSION IN P-TYPE GAAS METAL-OXIDE-SEMICONDUCTOR SURFACES
KASHKAROV, PK
KAZIOR, TE
LAGOWSKI, J
GATOS, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 963 - 970
[5] LUFT BD, 1982, PHYSICOCHEMICAL METH
[6] MOSS T, 1973, SEMICONDUCTIVE OPTOE
[7] MOTT NF, 1971, ELECTRONIC PROCESSES
[8] PROPERTIES OF ANODIC OXIDE-FILMS ON N-TYPE GAAS, GAAS0.6P0.4 AND GAP
SIXT, G
ZIEGLER, KH
FAHRNER, WR
[J]. THIN SOLID FILMS, 1979, 56 (1-2) : 107 - 116
[9] SOROKIN IN, 1982, IZV VUZ KHIM KH TEKH, V25, P588
[10] UNIFIED DEFECT MODEL AND BEYOND
SPICER, WE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027