BARRIERS AT EVAPORATED METAL-POLYCRYSTALLINE CDS INTERFACES - (PHOTOEMISSION - FILMS - CAPACITANCE - OHMIC CONTACTS - E)

被引:6
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LEARN, AJ
SCOTTMON.JA
SPRIGGS, RS
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10.1063/1.1754527
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O59 [应用物理学];
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页码:144 / &
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[2]   PHOTOVOLTAIC EFFECTS AT RECTIFYING JUNCTIONS TO DEPOSITED CDS FILMS [J].
BUJATTI, M ;
MULLER, RS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) :702-&
[3]   RECTIFICATION AND SPACE-CHARGE-LIMITED CURRENTS IN CDS FILMS [J].
DRESNER, J ;
SHALLCROSS, FV .
SOLID-STATE ELECTRONICS, 1962, 5 (JUL-A) :205-&
[5]   EVAPORATED METALLIC CONTACTS TO CONDUCTING CADMIUM SULFIDE SINGLE CRYSTALS [J].
GOODMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) :573-&
[6]  
HUGHES AL, 1932, PHOTOELECTRIC PHENOM, P241
[7]   SURFACE STATES ON SEMICONDUCTOR CRYSTALS - BARRIERS ON CD(SE-S) SYSTEM [J].
MEAD, CA .
APPLIED PHYSICS LETTERS, 1965, 6 (06) :103-&
[8]   PHOTOEMISSION FROM AU AND CU INTO CDS [J].
MEAD, CA ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1963, 2 (04) :74-75
[9]   BEHAVIOR OF CDS THIN FILM TRANSISTORS [J].
MIKSIC, MG ;
SCHLIG, ES ;
HAERING, RR .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :39-&
[10]  
NENISCH HK, 1957, RECTIFYING SEMICONDU, pCH7