INFLUENCE OF ANISOTROPIC STRESS ON ELECTRICAL CHARACTERISTICS OF GAAS1-XPX DIODES

被引：3

作者：

FULOP, W ^{[1
]}

KONIDARIS, S ^{[1
]}

机构：

[1] BRUNEL UNIV,DEPT PHYS,UXBRIDGE,MIDDLESEX,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 04期

关键词：

D O I：

10.1016/0038-1101(76)90028-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / 318

页数：6

共 50 条

[1] SPECTRAL SHIFT OF LIGHT EMITTING GAAS1-XPX DIODES INDUCED BY ANISOTROPIC STRESS
FULOP, W
KONIDARIS, S
PHYSICS LETTERS A, 1973, A 44 (05) : 349 - 350
[2] IMPROVED PERFORMANCE OF GAAS1-XPX LASER DIODES
TIETJEN, JJ
OCHS, SA
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (02): : 180 - &
[3] POSSIBILITIES OF FREQUENCY OF GUNN DIODES ON GAAS1-XPX
BELETSKII, NI
PROKHOROV, ED
RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (08): : 1761 - 1764
[4] ELECTROLUMINESCENCE OF VAPOR-GROWN GAAS AND GAAS1-XPX DIODES
NUESE, CJ
TIETJEN, JJ
GANNON, JJ
GOSSENBERGER, HF
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1968, 242 (03): : 400 - +
[5] DISLOCATIONS IN GAAS1-XPX
STRINGFELLOW, GB
GREENE, PE
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +
[6] CHARACTERISTICS OF THERMAL OXIDES GROWN ON GAAS1-XPX
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PANCHOLY, RK
PHILLIPS, DH
THIN SOLID FILMS, 1979, 56 (1-2) : 129 - 142
[7] GAAS1-XPX PHOTOCELLS WITH CONTROLLED SPECTRAL CHARACTERISTICS
GOROKHOV, VA
ILIN, YL
POPOV, VA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1983, 26 (01) : 207 - 208
[8] DISLOCATIONS IN GAAS1-XPX
MADER, S
BLAKESLEE, AE
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1975, 19 (02) : 151 - 162
[9] ELECTRICAL TRANSPORT PROPERTIES OF ZN DOPED GAAS1-XPX
PENAR, JD
COHEN, MM
BEDARD, FD
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (12): : 1605 - 1605
[10] EFFECT OF NEUTRON-IRRADIATION ON GAAS1-XPX ELECTROLUMINESCENT DIODES
EPSTEIN, AS
SHARE, S
POLIMADEI, RA
HERZOG, AH
APPLIED PHYSICS LETTERS, 1973, 23 (08) : 472 - 474

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