ORIENTED GROWTH OF A DIAMOND FILM ON SI(100) BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

被引：8

作者：

ZHANG, XX

SHI, TS

WANG, JX

ZHANG, XK

机构：

[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 155卷 / 1-2期

关键词：

Compendex;

D O I：

10.1016/0022-0248(95)00251-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of a diamond film (DF) deposited by hot filament chemical vapor deposition (HFCVD) has been investigated. Oriented growth of a [100] textured DF on a Si(100) substrate eroded by HF acid has been achieved under optimized growth conditions. The film has been characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and a stylus profilometer to show its microstructure, morphology and surface roughness. Continuous improvement of the [100] texture and a maximum in surface roughness are observed with increasing deposition time.

引用

页码：66 / 69

页数：4

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