VISIBLE-LIGHT EMISSION FROM A PN JUNCTION OF POROUS SILICON AND MICROCRYSTALLINE SILICON-CARBIDE

被引：38
作者：
FUTAGI, T
MATSUMOTO, T
KATSUNO, M
OHTA, Y
MIMURA, H
KITAMURA, K
机构：
[1] Electronics Research Laboratories, Nippon Steel Corporation, Kawasaki 211, 1618 Ida, Nakahara-ku
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期
关键词：
D O I：
10.1063/1.109773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated a new type of light-emitting diode based on a porous silicon and microcrystalline silicon carbide pn junction. The visible light emission from 580 to 820 nm with a peak of 700 nm was observed at forward bias voltages larger than 18 V, and the emission was quite uniform over an area of 1 cm2.
引用
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页码：1209 / 1210
页数：2
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