THE ROLE OF GALLIUM ANTISITE DEFECT IN ACTIVATION AND TYPE-CONVERSION IN SI IMPLANTED GAAS

被引：22
作者：
HIRAMOTO, T
MOCHIZUKI, Y
SAITO, T
IKOMA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 12期
关键词：
D O I：
10.1143/JJAP.24.L921
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L921 / L924
页数：4
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