THEORETICAL-STUDIES OF THE INTRINSIC QUALITY OF GAAS/ALGAAS INTERFACES GROWN BY MBE - ROLE OF KINETIC PROCESSES

被引：43
作者：
SINGH, J [1 ]
BAJAJ, KK [1 ]
机构：
[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,AADR,WRIGHT PATTERSON AFB,OH 45433
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词：
D O I：
10.1116/1.583166
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：520 / 523
页数：4
相关论文
共 14 条
[1]  
ARTHUR JR, 1979, SURF SCI, V43, P499
[2]  
DRUMMOND TJ, 1982, J APPL PHYS, V53, P3321
[3]   EFFECT OF SUBSTRATE-TEMPERATURE ON MOLECULAR-BEAM EPITAXIAL GAAS GROWTH USING AS-2 [J].
ERICKSON, LP ;
MATTORD, TJ ;
CARPENTER, GL ;
PALMBERG, PW ;
PEARAH, PJ ;
KLEIN, MV ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2231-2235
[4]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[5]   IMPROVEMENT OF THE INVERTED GAAS/ALGAAS HETEROINTERFACE [J].
FISCHER, R ;
MASSELINK, WT ;
SUN, YL ;
DRUMMOND, TJ ;
CHANG, YC ;
KLEIN, MV ;
MORKOV, H ;
ANDERSON, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :170-174
[6]   INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].
FOXON, CT ;
JOYCE, BA .
SURFACE SCIENCE, 1977, 64 (01) :293-304
[7]   KINETIC STUDIES OF GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR-BEAM TECHNIQUES [J].
JOYCE, BA ;
FOXON, CT .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :122-129
[8]  
NAGATA S, 1977, J APPL PHYS, V48, P950
[9]   ROLE OF ARSENIC (AS2 AS) IN CONTROLLING THE QUALITY OF GAAS GROWN BY MBE - THEORETICAL-STUDIES [J].
SINGH, J ;
BAJAJ, KK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :276-279
[10]  
SINGH J, UNPUB J VAC SCI TECH
12