INTERFERENCE FILTERS USING INDIUM PHOSPHIDE-BASED EPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：2

作者：

RITCHIE, S

SPURDENS, PC

HEWETT, NP

AYLETT, MR

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期

关键词：

D O I：

10.1063/1.102197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1713 / 1714

页数：2

共 6 条

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[5] HIGH-PERFORMANCE, LONG WAVELENGTH OPTOELECTRONIC COMPONENTS BY ATMOSPHERIC-PRESSURE MOVPE [J].

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[6] CHEMICAL BEAM EPITAXIALLY GROWN INP/INGAASP INTERFERENCE MIRROR FOR USE NEAR 1.55 MU-M WAVELENGTH [J].

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