MOSFET DEGRADATION DURING SUBSTRATE HOT-ELECTRON STRESS

被引：3
作者：
ZHAO, SP [1 ]
TAYLOR, S [1 ]
MCPHIE, A [1 ]
机构：
[1] GPS,PLYMOUTH,DEVON,ENGLAND
来源：
MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期
关键词：
D O I：
10.1016/0026-2692(94)90036-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The reliability of n-channel MOSFETs during hot electron injection is studied using the SHE technique on CMOS samples. Results show the degradation dependence of the oxide bulk and interface over the field range from 0.5 to 6 MV cm(-1) for different injection fluence levels, which had been conveniently monitored using subthreshold current measurements.
引用
收藏
页码：515 / 522
页数：8
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