MOSFET DEGRADATION DURING SUBSTRATE HOT-ELECTRON STRESS

被引：3

作者：

ZHAO, SP ^{[1
]}

TAYLOR, S ^{[1
]}

MCPHIE, A ^{[1
]}

机构：

[1] GPS,PLYMOUTH,DEVON,ENGLAND

来源：

MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期

关键词：

D O I：

10.1016/0026-2692(94)90036-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of n-channel MOSFETs during hot electron injection is studied using the SHE technique on CMOS samples. Results show the degradation dependence of the oxide bulk and interface over the field range from 0.5 to 6 MV cm(-1) for different injection fluence levels, which had been conveniently monitored using subthreshold current measurements.

引用

页码：515 / 522

页数：8

共 50 条

[21] MOSFET degradation and hot electron modeling
Dejenfelt, Anders T.
Chalmers Tekniska Hogskola, Doktorsavhandlingar, 1991, (789):
[22] SUBSTRATE HOT-ELECTRON INJECTION EPROM.
Eitan, Boaz
McCreary, James L.
Amrany, Daniel
Shappir, Joseph
IEEE Transactions on Electron Devices, 1984, ED-31 (07) : 934 - 942
[23] CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS
SELMI, L
FIEGNA, C
BEZ, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) : 1677 - 1679
[24] LEAKAGE CURRENT DEGRADATION IN N-MOSFETS DUE TO HOT-ELECTRON STRESS
DUVVURY, C
REDWINE, DJ
STIEGLER, HJ
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) : 579 - 581
[25] SOME ASPECTS OF HOT-ELECTRON AGING IN MOSFET's.
Radojcic, Riko
IEEE Transactions on Electron Devices, 1984, ED-31 (10) : 1381 - 1386
[26] CHANNEL HOT-ELECTRON DEGRADATION MODEL FOR IGFETS
TROUTMAN, R
COTTRELL, P
HARROUN, T
CHAKRAVARTI, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1849 - 1850
[27] INTERFACE STATE GENERATION MECHANISM IN MOSFETS DURING SUBSTRATE HOT-ELECTRON INJECTION
YASUDA, N
NAKAMURA, H
TANIGUCHI, K
HAMAGUCHI, C
KAKUMU, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2395 - L2397
[28] A NOVEL SUBSTRATE HOT-ELECTRON AND HOLE INJECTION STRUCTURE WITH A DOUBLE-IMPLANTED BURIED-CHANNEL MOSFET
YOON, S
SIERGIEJ, R
WHITE, MH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2722 - 2722
[29] Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress
Vogel, EM
Edelstein, MD
Suehle, JS
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 73 - 83
[30] The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's
Ference, TG
Burnham, JS
Clark, WF
Hook, TB
Mittl, SW
Watson, KM
Han, LKK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) : 747 - 753

← 1 2 3 4 5 →