USE OF THE 3-DIMENSIONAL TLM METHOD IN THE THERMAL SIMULATION AND DESIGN OF SEMICONDUCTOR-DEVICES

被引：39

作者：

GUI, X ^{[1
]}

WEBB, PW ^{[1
]}

GAO, GB ^{[1
]}

机构：

[1] UNIV BIRMINGHAM, SCH ELECTR & ELECT ENGN, BIRMINGHAM B15 2TT, W MIDLANDS, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/16.137307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal behavior of semiconductor devices fabricated with a variety of different materials has been analyzed using the three-dimensional transmission-line matrix (TLM) method. This method can easily incorporate the temperature dependence of thermal parameters, is numerically stable, and compares favorably with other numerical techniques in computational expenditure and convenience in modeling complex geometries. As an example, a three-dimensional thermal analysis of a typical microwave power device structure is presented. The model demonstrates the effects of overlay metal and conductivity of the substrate material in limiting the temperature rise. Both the transient and steady-state thermal operation are quantitatively studied. The study shows that the TLM method has considerable potential in the thermal analysis and design of semiconductor devices.

引用

页码：1295 / 1302

页数：8

共 50 条

[1] A 3-DIMENSIONAL ANALYSIS OF SEMICONDUCTOR-DEVICES
YOSHII, A
KITAZAWA, H
TOMIZAWA, M
HORIGUCHI, S
SUDO, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 184 - 189
[2] 3-DIMENSIONAL SIMULATION OF SEMICONDUCTOR-DEVICES - STATE-OF-THE-ART AND PROSPECTS
BACCARANI, G
CIAMPOLINI, P
PIERANTONI, A
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2): : 253 - 259
[3] 3-DIMENSIONAL NUMERICAL-ANALYSIS OF SEMICONDUCTOR-DEVICES AND STRUCTURES
ABRAMOV, II
KHARITONOV, VV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1987, 30 (09): : 33 - 37
[4] 3-DIMENSIONAL TLM METHOD - MODIFICATION OF THE SIMULATION PROCESS
SAGUET, P
TEDJINI, S
ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1985, 40 (3-4): : 145 - 152
[5] TLM MODELING OF SOLDER JOINTS IN SEMICONDUCTOR-DEVICES
HENINI, M
DECOGAN, D
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1987, 10 (03): : 440 - 445
[6] SIMULATION OF SEMICONDUCTOR-DEVICES
AKERS, LA
SIMULATION, 1977, 29 (02) : 33 - 41
[7] THERMAL DISTRIBUTIONS IN SEMICONDUCTOR-DEVICES
MARSHALL, SL
SOLID STATE TECHNOLOGY, 1978, 21 (07) : 33 - 33
[8] THERMAL DIAGNOSTICS OF SEMICONDUCTOR-DEVICES
NOWAKOWSKI, A
FIFTH ANNUAL IEEE SEMICONDUCTOR THERMAL AND TEMPERATURE MEASUREMENT SYMPOSIUM, 1989, : 146 - 146
[9] SIMULATION OF COMPOUND SEMICONDUCTOR-DEVICES
SCHOENMAKER, W
VANKEMMEL, R
MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 31 - 38
[10] STUB TLM MODELING OF HEAT-FLOW IN SEMICONDUCTOR-DEVICES
DECOGAN, D
SHAH, AK
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1986, 19 (05) : 721 - 725

← 1 2 3 4 5 →