共 34 条
[2]
SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2)
[J].
PHYSICAL REVIEW B,
1986, 34 (10)
:6605-6611
[4]
MODELING OF INTERFACE REACTION-PRODUCTS WITH HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1985, 3 (03)
:907-910
[5]
ADATOM AGGREGATION, REACTION, AND CHEMICAL TRAPPING AT THE SM/GAAS(110) INTERFACE
[J].
PHYSICAL REVIEW B,
1985, 32 (02)
:962-968
[6]
METAL-ANION BOND STRENGTH AND ROOM-TEMPERATURE DIFFUSION AT METAL/GAAS INTERFACES - TRANSITION VERSUS RARE-EARTH VERSUS AU METAL OVERLAYERS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
1986, 4 (03)
:965-968
[7]
REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1985, 3 (03)
:918-921
[8]
INTERFACIAL CHEMISTRY AND SCHOTTKY-BARRIER FORMATION OF THE NI/INP(110) AND NI/GAAS(110) INTERFACES
[J].
PHYSICAL REVIEW B,
1985, 32 (06)
:3758-3765
[10]
THE OXIDATION OF GAAS(110) - A REEVALUATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1984, 2 (03)
:351-358