ELECTRONIC-STRUCTURE OF LIGHT-EMITTING POROUS SI

被引：198
作者：
VASQUEZ, RP
FATHAUER, RW
GEORGE, T
KSENDZOV, A
LIN, TL
机构：
[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 08期
关键词：
D O I：
10.1063/1.106503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characterization of light-emitting porous Si films with x-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.
引用
收藏
页码：1004 / 1006
页数：3
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