A MOLECULAR AND ION-BEAM EPITAXY SYSTEM FOR THE GROWTH OF III-V-COMPOUND SEMICONDUCTORS USING A MASS-SEPARATED, LOW-ENERGY GROUP-V ION-BEAM

被引：12
作者：
SHIMIZU, S [1 ]
TSUKAKOSHI, O [1 ]
KOMIYA, S [1 ]
MAKITA, Y [1 ]
机构：
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 09期
关键词：
D O I：
10.1143/JJAP.24.1130
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1130 / 1140
页数：11
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