EPITAXIAL-GROWTH OF PBS THIN-FILMS FROM AQUEOUS-SOLUTION

被引：39
作者：
ISSHIKI, M [1 ]
ENDO, T [1 ]
MASUMOTO, K [1 ]
USUI, Y [1 ]
机构：
[1] ISHINOMAKI SENSYU UNIV,FAC SCI & TECHNOL,DEPT ELECTR MAT,ISHINOMAKI 986,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期
关键词：
D O I：
10.1149/1.2087014
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Chemical deposition of PbS from aqueous solutions has been studied using a reaction of PbS(N03)2and CS(NH2)2 with excess NaOH. The growth rate was measured as a function of temperature and concentrations of NaOH and CS(NH2)2using glass substrates. It is found that the incubation time depends on temperature and CS(NH2)2concentration. Epitaxial growth of PbS on Ge(100) and InP(lOO) substrates is confirmed by means of the Laue back reflection x-ray and the electron channeling patterns. The best surface morphology is obtained on the epitaxial film grown on InP(lOO) substrate at 298 K with the concentrations of NaOH and CS(NH2)2at 0.57 and 0.4 M/liter, respectively. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.
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页码：2697 / 2700
页数：4
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